Researchers from the University of Minnesota have managed to deposit Bismuth Selenide (Bi2Se3) films using a simple sputtering technique.
Bismuth Selenide is topological insulator and a promising material for spintronics applications including MRAM devices. The material produced in this research featured a high spin torque at room temperatures.
Researchers from the Tokyo Institute of Technology have developed a new thin film material made from bismuth-antimony (BiSb) that is a topological insulator that simultaneously achieves a colossal spin Hall effect and high electrical conductivity.
This material could be used as the basis of spin-orbit torque MRAM (SOT-MRAM). SOT-MRAM SOT-MRAM can overcome the limitation of spin-transfer torque in MRAM memories - and provide a much faster, denser and much more efficient memory technology. Up until now, though, no suitable material that features both high electrical conductivity and a high spin hall effect was developed.