Researchers manage to produce promising Bismuth Selenide films using sputtering

Researchers from the University of Minnesota have managed to deposit Bismuth Selenide (Bi₂Se₃) films using a simple sputtering technique.

Bismuth Selenide is topological insulator and a promising material for spintronics applications including MRAM devices. The material produced in this research featured a high spin torque at room temperatures.

Source:

Electronics Weekly

Tags:

Memory

Research / Technical

Topological insulators

Posted: Aug 30,2018 by Ron Mertens

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