Researchers from Japan's National Institute for Materials Science (NIMS) have managed to introduce a quantum well structure into a conventional magnetic tunnel junction (MTJ). The researchers say that the QW structure can enhance the tunneling magnetoresistance (TMR) ratio by spin-dependent resonant tunnel (SDRT) effect, with a value of 1.5 times comparing with no SDRT case, at room temperature.
The researchers tell us that the key point of the QW formation is the band mismatch between Cr and Fe for majority band, and the mismatch-free Fe/MgAl2O4 interface. The finding is not just useful for enhancement of TMR ratio, it also provides a benefit that the TMR ratio could be kept almost constant in a wide bias voltage range of from -1V to 0.5V.
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Posted: Sep 25,2019 by Ron Mertens