Researchers from the US Naval Research Laboratory (NRL) demonstrated metallic spin filtering at room temperatures, using a ferromagnet-graphene-ferromagnet thin film junction device.
Spin filtering has been theoretically predicted, and previously seen only for high-resistance structures at cryogenic temperatures. This is the first time that someone demonstrated the effect in room temperatures, and with very low resistance in arrays of multiple devices.
Following the fabrication of the device, the researchers determined that the spin polarization was at least 80% in the graphene layer. The NRL researchers developed their own technical to grow a large multi-layer graphene film directly on a smooth, crystalline nickel alloy film. They then patterned the film into arrays of cross-bar junctions. This was all done with standard tools.
The researchers say that these results may be relevant to MRAM memory, and also help in future spin-logic and spin-sensor technologies.