Researchers from Japan's Tokyo Institute of Technology, National Institute for Materials Science and National Institute of Advanced Industrial Science and Technology have found that lead-based vacancy centers in diamonds, that form after high-pressure and high-temperature treatment, are ideal for quantum networks, spintronics and quantum sensors.
The color in a diamond comes from a defect, or âvacancy,â where there is a missing carbon atom in the crystal lattice. Vacancies have long been of interest to electronics researchers because they can be used as âquantum nodesâ or points that make up a quantum network for the transfer of data. One of the ways of introducing a defect into a diamond is by implanting it with other elements, like nitrogen, silicon, or tin. In their recent study, the scientists from Japan demonstrated that lead-vacancy centers in diamond have the right properties to function as quantum nodes. âThe use of a heavy group IV atom like lead is a simple strategy to realize superior spin properties at increased temperatures, but previous studies have not been consistent in determining the optical properties of lead-vacancy centers accurately,â says Associate Professor Takayuki Iwasaki of Tokyo Institute of Technology (Tokyo Tech), who led the study.
The researchers fabricated the lead-vacancies in diamond and then subjected the crystal to high pressure and high temperature. They then studied the lead vacancies using photoluminescence spectroscopy, a technique that allows to read the optical properties and to estimate the spin properties. They found that the lead-vacancies had a type of dihedral symmetry, which is appropriate for the construction of quantum networks.
They also found that the system showed a large âground state splitting,â a property that contributes to the coherence of the system. Finally, they saw that the high-pressure high-temperature treatment they inflicted upon the crystals suppressed inhomogeneous distribution of ZPLs by recovering the damage done to the crystal lattice during the implantation process. A simple calculation showed that lead-vacancies had a long spin coherence time at a higher temperature (9K) than previous systems with silicon and tin vacancies.
âThe simulation we presented in our study seems to suggest that the lead-vacancy center will likely be an essential system for creating a quantum light-matter interfaceâone of the key elements in the application of quantum networks,â concludes an optimistic Dr. Iwasaki.