Researchers from the University of Utah develop new room-temperature Spintronic transistors
Researchers from the University of Utah developed a new spintronic transistor that can be used to align electron spin for a record period of time in silicon chips at room temperature. The research was funded by the National Science Foundation.
The researchers used electricity and magnetic fields to inject "spin polarized carriers" - namely, electrons with their spins aligned either all up or all down - into silicon at room temperature. The new technique was to use magnesium oxide as a "tunnel barrier" to get the aligned electron spins to travel from one nickel-iron electrode through the silicon semiconductor to another nickel-iron electrode. Without the magnesium oxide, the spins would get randomized almost immediately, half up and half down.