Control of Bistable Antiferromagnetic States for Spintronics
Scientists from MPI CPfS, in collaboration with colleagues from National Yang Ming Chiao Tung University, National Cheng Kung University, and National Synchrotron Radiation Research Center in Taiwan as well as from Hiroshima University in Japan, have used strained engineering on multiferroic BiFeO3 (BFO) thin films, to fabricate bistable antiferromagnetic states at room temperature for the first time.
These two antiferromagnetic states are non-volatile and very close to each other in energy, which was verified by soft x-ray linear dichroism spectroscopy. Moreover, these two non-volatile antiferromagnetic states can be reversibly switched by a moderate magnetic field and a non-contact optical approach. The team stressed that the conductivity of the two antiferromagnetic domains is drastically different.